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LESHAN RADIO COMPANY, LTD.
N-CHANNEL POWER MOSFET LMBF170LT1
FEATURE
Pb-Free Package is available.
LMBF170LT1
3
1 2
DEVICE MARKING AND ORDERING INFORMATION
Device LMBF170LT1 LMBF170LT1G LMBF170LT3 LMBF170LT3G Marking 6Z 6Z (Pb-Free) 6Z 6Z (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 10000/Tape&Reel
SOT-23
Drain 3
1 Gate 2 Source
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) Drain Current - Continuous - Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 20 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (Note 1.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA TJ, Tstg 556 -55 to +150 mW mW/C C/W C Max Unit
1. FR-5 = 1.0 0.75 0.062 in.
LMBF170LT1-1/4
LESHAN RADIO COMPANY, LTD.
LMBF170LT1
ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IGSS 60 - - 10 Vdc nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) On-State Drain Current (VDS = 25 Vdc, VGS = 0) VGS(th) rDS(on) ID(off) 0.8 - - 3.0 5.0 0.5 Vdc W mA
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss - 60 pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn-On Delay Time Turn-Off Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 td(on) td(off) - - 10 10 ns
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. +25 V
ton td(on) TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT INVERTED Vout INPUT
PULSE GENERATOR 50 W
Vin 40 pF
125 W 20 dB 50 W ATTENUATOR
tr 90% 10%
td(off)
90%
toff tf
50 W
1 MW
Vin
10%
50% PULSE WIDTH
90% 50%
(Vin AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
LMBF170LT1-2/4
LESHAN RADIO COMPANY, LTD.
LMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10
1.0 VDS = 10 V 0.8 0.6 0.4 0.2 -55C 125C 25C
0
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 3. Ohmic Region
Figure 4. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1.0 mA
Figure 5. Temperature versus Static Drain-Source On-Resistance
Figure 6. Temperature versus Gate Threshold Voltage
LMBF170LT1-3/4
LESHAN RADIO COMPANY, LTD.
LMBF170LT1 SOT-23
NOTES:
A L
3 1 2
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
BS
DIM A B C D G H J K L S V
V
G
C D H K J
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
PIN 1. Gate 2. Source 3. Drain
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
LMBF170LT1-4/4

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